Single crystal sapphire is a material with high hardness, excellent chemical stability and optical transparency over a wide wavelength range. Due to these advantages, it is widely used in various industries including healthcare, engineering, military supply, aviation, optics.
For the growth of large diameter single crystal sapphire, the Kyropoulos (Ky) and Czochralski (Cz) methods are mainly used. The Cz method is a widely used single crystal growth technique in which alumina is melted in a crucible and a seed is pulled up; the seed is rotated simultaneously after contacting the molten metal surface, and the Ky method is mainly used for single crystal growth of large diameter sapphire. Although its basic growth furnace is similar to the Cz method, the seed crystal does not rotate after contacting the molten alumina, but slowly lowers the heater temperature to allow the single crystal to grow downward from the seed crystal. We can use high temperature resistant products in sapphire furnace, such as tungsten crucible, molybdenum crucible, tungsten and molybdenum heat shield, tungsten heating element and other special-shaped tungsten and molybdenum products.
